EFFECTS OF DEGENERACY ON DOPING EFFICIENCY FOR N-TYPE IMPLANTS IN GAAS

被引：20

作者：

GIBBONS, JF ^{[1
]}

TREMAIN, RE ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

关键词：

D O I：

10.1063/1.88114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：199 / 201

页数：3

共 7 条

[1] BLAKEMORE JS, 1952, ELECTRON COMMUN, V29, P131
[2] EISEN F, 1974, 4 P INT C ION IMPL O
[3] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION
FOYT, AG
DONNELLY, JP
LINDLEY, WT
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (12) : 372 - &
[4] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS
HARRIS, JS
MAYER, JW
EISEN, FH
HASKELL, JD
WELCH, B
PASHLEY, RD
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 601 - &
[5] HUNSPERGER RG, 1974, 1974 DEV RES C SANT
[6] MULLER H, 1974, 4 P INT C ION IMPL O
[7] TREMAIN RE, 1975, THESIS STANFORD U