NEW INGAAS-INP AVALANCHE PHOTO-DIODE STRUCTURE FOR THE 1-1.6 MU-M WAVELENGTH REGION

被引：105

作者：

SUSA, N

NAKAGOME, H

MIKAMI, O

ANDO, H

KANBE, H

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1980年 / 16卷 / 08期

关键词：

D O I：

10.1109/JQE.1980.1070588

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：864 / 870

页数：7

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