AN N+-N-P GERMANIUM AVALANCHE PHOTO-DIODE

被引：17

作者：

KANEDA, T ^{[1
]}

KAGAWA, S ^{[1
]}

MIKAWA, T ^{[1
]}

TOYAMA, Y ^{[1
]}

ANDO, H ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO, TOKYO 180, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 07期

关键词：

D O I：

10.1063/1.91550

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：572 / 574

页数：3

共 10 条

[1] CHARACTERISTICS OF GERMANIUM AVALANCHE PHOTO-DIODES IN WAVELENGTH REGION OF 1-1.6 MU-M
ANDO, H
KANBE, H
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YAMAOKA, T
KANEDA, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (11) : 804 - 809
[2] TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GE
DAI, BT
CHANG, CY
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) : 5198 - &
[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K
DASH, WC
NEWMAN, R
[J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155
[4] AVALANCHE-PHOTODIODE FREQUENCY RESPONSE
EMMONS, RB
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3705 - +
[5] FREQUENCY-RESPONSE OF GERMANIUM AVALANCHE PHOTODIODES
KANEDA, T
TAKANASHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (10) : 1652 - 1653
[6] AVALANCHE BUILT-UP TIME OF GERMANIUM AVALANCHE PHOTODIODE
KANEDA, T
TAKANASHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (07) : 1091 - 1092
[7] SHALLOW-JUNCTION P+-N GERMANIUM AVALANCHE PHOTO-DIODES (APDS)
KANEDA, T
FUKUDA, H
MIKAWA, T
BANBA, Y
TOYAMA, Y
ANDO, H
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 866 - 868
[8] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES
MCINTYRE, RJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 164 - +
[9] SIGNAL AND NOISE RESPONSE OF HIGH SPEED GERMANIUM AVALANCHE PHOTODIODES
MELCHIOR, H
LYNCH, WT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) : 829 - +
[10] AVALANCHE BREAKDOWN IN GERMANIUM
MILLER, SL
[J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241

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