TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GE

被引:18
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DAI, BT
CHANG, CY
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10.1063/1.1659922
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O59 [应用物理学];
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页码:5198 / &
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共 10 条
[1]   DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].
BARAFF, GA .
PHYSICAL REVIEW, 1962, 128 (06) :2507-&
[2]   CARRIER TRANSPORT ACROSS METAL-SEMICONDUCTOR BARRIERS [J].
CHANG, CY ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :727-+
[3]  
CHANG CY, 1971, IEEE T ELECTRON DEVI, VED18, P391
[4]   TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GAAS [J].
CHANG, YJ ;
SZE, SM .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) :5392-&
[5]  
CROWELL CR, 1969, APPL PHYS LETTERS, V40, P5392
[6]  
DAI BT, 1970, THESIS NATIONAL CHIA
[7]   IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].
LEE, CA ;
KLEIMACK, JJ ;
BATDORF, RL ;
WIEGMANN, W ;
LOGAN, RA .
PHYSICAL REVIEW, 1964, 134 (3A) :A761-+
[8]   AVALANCHE BREAKDOWN IN GERMANIUM [J].
MILLER, SL .
PHYSICAL REVIEW, 1955, 99 (04) :1234-1241
[9]  
SZE SM, 1969, PHYSICS SEMICONDUCTO
[10]   CRYSTAL DYNAMICS OF GALLIUM ARSENIDE [J].
WAUGH, JLT ;
DOLLING, G .
PHYSICAL REVIEW, 1963, 132 (06) :2410-+