TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GAAS

被引：26

作者：

CHANG, YJ

SZE, SM

机构：

[1] College of Engineering, National Chiao Tung University, Hsinchu

来源：

关键词：

D O I：

10.1063/1.1657402

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：5392 / &

共 6 条

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[2] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
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[3] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON
LEE, CA
KLEIMACK, JJ
BATDORF, RL
WIEGMANN, W
LOGAN, RA
[J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +
[4] LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434
[5] SZE SM, 1969, PHYSICS SEMICONDUCTO
[6] CRYSTAL DYNAMICS OF GALLIUM ARSENIDE
WAUGH, JLT
DOLLING, G
[J]. PHYSICAL REVIEW, 1963, 132 (06): : 2410 - +