SILICON AVALANCHE PHOTODIODES WITH LOW MULTIPLICATION NOISE AND HIGH-SPEED RESPONSE

被引：35

作者：

KANBE, H ^{[1
]}

KIMURA, T ^{[1
]}

MIZUSHIMA, Y ^{[1
]}

KAJIYAMA, K ^{[1
]}

机构：

[1] MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 12期

关键词：

D O I：

10.1109/T-ED.1976.18659

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1337 / 1343

页数：7

共 20 条

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[8]

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[9] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].

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[10] DISTRIBUTION OF GAINS IN UNIFORMLY MULTIPLYING AVALANCHE PHOTODIODES - THEORY [J].

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