EXCESS NOISE IN SILICON AVALANCHE PHOTODIODES

被引：20

作者：

KANEDA, T ^{[1
]}

MATSUMOTO, H ^{[1
]}

SAKURAI, T ^{[1
]}

YAMAOKA, T ^{[1
]}

机构：

[1] FUJITSU LABS,KAWASAKI,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.322778

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1605 / 1607

页数：3

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