AN OPTIMIZED AVALANCHE PHOTODIODE

被引：73

作者：

RUEGG, HW

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 05期

关键词：

D O I：

10.1109/T-ED.1967.15937

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：239 / +

页数：1

共 23 条

[1] MICROWAVE PHOTODIODES EXHIBITING MICROPLASMA-FREE CARRIER MULTIPLICATION (SI P-N JUNCTIONS 3 GC/SEC E) [J].

ANDERSON, LK ;

MCMULLIN, PG ;

DASARO, LA ;

GOETZBERGER, A .

APPLIED PHYSICS LETTERS, 1965, 6 (04) :62-+

[2]

ANDERSON LK, 1964, INT SOLIDSTATE CIRCU, P60

[3] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J].

CHYNOWETH, AG .

PHYSICAL REVIEW, 1958, 109 (05) :1537-1540

[4] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[5] FREQUENCY RESPONSE OF AVALANCHING PHOTODIODES [J].

EMMONS, RB ;

LUCOVSKY, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (03) :297-+

[6] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].

GARTNER, WW .

PHYSICAL REVIEW, 1959, 116 (01) :84-87

[7] HIGH-SPEED PHOTODIODE SIGNAL ENHANCEMENT AT AVALANCHE BREAKDOWN VOLTAGE [J].

JOHNSON, KM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (02) :55-+

[8]

JOHNSON KM, 1964, INT SOL STAT CIRC C, P64

[9] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].

LEE, CA ;

KLEIMACK, JJ ;

BATDORF, RL ;

WIEGMANN, W ;

LOGAN, RA .

PHYSICAL REVIEW, 1964, 134 (3A) :A761-+

[10]

LUCOVSKY G, 1965, ISSCC DIGEST TECH PA, P52

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