DISTRIBUTION OF GAINS IN UNIFORMLY MULTIPLYING AVALANCHE PHOTODIODES - THEORY

被引:359
作者
MCINTYRE, RJ
机构
关键词
D O I
10.1109/T-ED.1972.17485
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:703 / &
相关论文
共 15 条
[1]   NOISE AND MULTIPLICATION MEASUREMENTS IN INSB AVALANCHE PHOTODIODES [J].
BAERTSCH, RD .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) :4267-+
[2]  
BAERTSCH RD, 1966, IEEE T ELECTRON DEVI, VED13, P987
[3]  
CONRADI J, 1972, IEEE T ELECTRON DEVI, VED19, P713
[4]  
GOULDING FS, 1970, IEEE T NUCL SC 1, VNS17, P218
[5]   NOISE ANALYSIS FOR A SILICON PARTICLE DETECTOR WITH INTERNAL MULTIPLICATION [J].
HAITZ, RH ;
SMITS, FM .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (03) :198-+
[6]  
KERN HE, 1970, IEEE NUCL S, VNS17, P425
[7]   IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].
LEE, CA ;
KLEIMACK, JJ ;
BATDORF, RL ;
WIEGMANN, W ;
LOGAN, RA .
PHYSICAL REVIEW, 1964, 134 (3A) :A761-+
[8]  
MCINTYRE RJ, 1966, IEEE T ELECTRON DEVI, VED13, P164
[9]   SIGNAL AND NOISE RESPONSE OF HIGH SPEED GERMANIUM AVALANCHE PHOTODIODES [J].
MELCHIOR, H ;
LYNCH, WT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) :829-+
[10]  
MELCHIOR H, 1965 INT EL DEV M WA