NOISE AND MULTIPLICATION MEASUREMENTS IN INSB AVALANCHE PHOTODIODES

被引：45

作者：

BAERTSCH, RD

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 11期

关键词：

D O I：

10.1063/1.1709114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4267 / +

页数：1

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[7] FREQUENCY RESPONSE OF AVALANCHING PHOTODIODES
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[8] FRANZ W, 1958, Z NATURFORSCH PT A, V13, P484
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[10] COMMENT ON POLARITY EFFECTS IN INSB-ALLOYED P-N JUNCTIONS
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