ELECTRIC-FIELD-INDUCED INFRARED ABSORPTION IN GAAS P-N JUNCTIONS

被引：15

作者：

BURGIEL, JC

机构：

来源：

APPLIED PHYSICS LETTERS | 1966年 / 9卷 / 11期

关键词：

D O I：

10.1063/1.1754623

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：389 / &

相关论文

共 15 条

[1] REFLECTION AND GUIDING OF LIGHT AT P-N JUNCTIONS
ASHKIN, A
GERSHENZON, M
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) : 2116 - &
[2] AMPLITUDE MODULATION OF INFRARED AND SUB-MM WAVE RADIATION BY REVERSE-BIASED JUNCTION DIODES
DEB, S
CHAUDHURI, PK
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (01): : 81 - +
[3] SHIFT OF OPTICAL ABSORPTION EDGE BY ELECTRIC FIELD - MODULATION OF LIGHT IN SPACE-CHARGE REGION OF GE P-N JUNCTION ( 90 PERCENT MODULATION AT LAMBDA - 1.56 MU E )
FROVA, A
HANDLER, P
[J]. APPLIED PHYSICS LETTERS, 1964, 5 (01) : 11 - &
[4] NEW PHOTOELECTRIC DEVICES UTILIZING CARRIER INJECTION
LEHOVEC, K
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1407 - 1409
[5] MEYERHOFER D, 1960, PRAGUE C SEMICONDUCT
[6] AMPLITUDE MODULATION OF INFRARED LIGHT BY GAAS P-N JUNCTIONS
MIGITAKA, M
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (03): : 326 - &
[7] MIGITAKA M, 1965, OYO BUTURI JAPAN, V34, P889
[8] LIGHT MODULATION BY ELECTRO-OPTIC EFFECT IN REVERSE-BIASED GAP P-N JUNCTIONS (INDEX OF REFRACTION CHANGE DELTAN EQUALS )1.6 PLUS MINUS .4) TIMES 10-3 LAMBDA EQUALS 5460 TO 6150 A 300 DEGREES K E/T)
NELSON, DF
REINHART, FK
[J]. APPLIED PHYSICS LETTERS, 1964, 5 (07) : 148 - &
[9] AMPLITUDE MODULATION OF LIGHT BY REVERSE BIASED P-N JUNCTIONS
RENTON, CA
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (01) : 93 - &
[10] PROPERTIES OF P-TYPE GAAS PREPARED BY COPPER DIFFUSION
ROSI, FD
MEYERHOFER, D
JENSEN, RV
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 1105 - 1108