COMMENT ON POLARITY EFFECTS IN INSB-ALLOYED P-N JUNCTIONS

[1] POLARITY EFFECTS IN INSB ALLOYED P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 176 - &

[2] INDIUM ANTIMONIDE TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1961, 3 (3-4) : 159 - 166

[3] JONES ME, 1961, LONDE ELECTRIQUE, V41, P303

[4] THE CONTAMINATION OF SEMICONDUCTOR SURFACES .1. METAL IONS FROM ACID SOLUTION ON THE INTERMETALLICS, GAAS AND INSB [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (12) : 1130 - 1134

[5] NORD18902AD282987

[1] POLARITY EFFECTS IN INSB ALLOYED P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 176 - &

[2] INDIUM ANTIMONIDE TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1961, 3 (3-4) : 159 - 166

[3] JONES ME, 1961, LONDE ELECTRIQUE, V41, P303

[4] THE CONTAMINATION OF SEMICONDUCTOR SURFACES .1. METAL IONS FROM ACID SOLUTION ON THE INTERMETALLICS, GAAS AND INSB [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (12) : 1130 - 1134

[5] NORD18902AD282987