INDIUM ANTIMONIDE TRANSISTORS

[1] DEUITCH DE, 1956, TRANSISTORS, V1

[2] STRUCTURE-DETERMINED GAIN-BAND PRODUCT OF JUNCTION TRIODE TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (12): : 1924 - 1927

[3] HIGH ELECTRIC FIELD EFFECTS IN N-INDIUM ANTIMONIDE [J]. PHYSICAL REVIEW, 1958, 110 (05): : 1204 - 1205

[4] KENDALL DL, UNPUB

[5] KROEMER H, 1954, ARCH ELEKT UEBERTRAG, V8, P363

[6] PRITCHARD RL, 1954, JAN AIEE WINT M NEW

[7] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769

[1] DEUITCH DE, 1956, TRANSISTORS, V1

[2] STRUCTURE-DETERMINED GAIN-BAND PRODUCT OF JUNCTION TRIODE TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (12): : 1924 - 1927

[3] HIGH ELECTRIC FIELD EFFECTS IN N-INDIUM ANTIMONIDE [J]. PHYSICAL REVIEW, 1958, 110 (05): : 1204 - 1205

[4] KENDALL DL, UNPUB

[5] KROEMER H, 1954, ARCH ELEKT UEBERTRAG, V8, P363

[6] PRITCHARD RL, 1954, JAN AIEE WINT M NEW

[7] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769