VAPOR GROWTH OF INP FOR MESFETS

被引：28

作者：

CHEVRIER, J

ARMAND, M

HUBER, AM

LINH, NT

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 04期

关键词：

D O I：

10.1007/BF02652894

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：745 / 761

页数：17

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