VAPOR-PHASE EPITAXY OF INP - GROWTH-KINETICS AND CONTROLLED DOPING

被引：10

作者：

CHEVRIER, J

HUBER, A

LINH, NT

机构：

[1] Thomson-CSF, Laboratoire Central de Recherches, F-91401 Orsay

来源：

JOURNAL OF CRYSTAL GROWTH | 1979年 / 47卷 / 02期

关键词：

D O I：

10.1016/0022-0248(79)90251-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial layers of InP have been grown in an open tube system from the vapour phase. Growth rate, doping level, mobility of electrons and dislocation density have been found to be affected by the flow rate: low flow rate is recommended for the growth of high quality layers. The effect of PCI3 molar fraction has been studied in detail: it has been shown that the molar fraction in the seed region is one of the parameters controlling the doping level, independent of the molar fraction occuring at the source zone. © 1979.

引用

页码：267 / 273

页数：7

共 25 条

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