MULTILAYERED STRUCTURES OF EPITAXIAL INDIUM-PHOSPHIDE

[1] BERSON BE, 1970, RCA REV MAR, P20

[2] MEASUREMENT OF CARRIER-CONCENTRATION PROFILES IN EPITAXIAL INDIUM PHOSPHIDE [J]. ELECTRONICS LETTERS, 1973, 9 (04) : 88 - 89

[3] STUDY OF MOLAR FRACTION EFFECT IN PCI3-IN-H2 SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 23 (02) : 166 - 168

[4] PREPARATION OF HIGH PURITY EPITAXIAL INF [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (14) : 1125 - &

[5] CLARKE RE, TO BE PUBLISHED

[6] COLLIVER DJ, 1974, ELECTRON LETT, V10, P222

[7] CORLETT R, 1974, I PHYS C SER, V24, P89

[8] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 189 - +

[9] HALES MC, 1971, 3RD P INT S GAAS I 9, P50

[10] HOLLAN L, 1974, I PHYS C SER, V24, P22

[1] BERSON BE, 1970, RCA REV MAR, P20

[2] MEASUREMENT OF CARRIER-CONCENTRATION PROFILES IN EPITAXIAL INDIUM PHOSPHIDE [J]. ELECTRONICS LETTERS, 1973, 9 (04) : 88 - 89

[3] STUDY OF MOLAR FRACTION EFFECT IN PCI3-IN-H2 SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 23 (02) : 166 - 168

[4] PREPARATION OF HIGH PURITY EPITAXIAL INF [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (14) : 1125 - &

[5] CLARKE RE, TO BE PUBLISHED

[6] COLLIVER DJ, 1974, ELECTRON LETT, V10, P222

[7] CORLETT R, 1974, I PHYS C SER, V24, P89

[8] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 189 - +

[9] HALES MC, 1971, 3RD P INT S GAAS I 9, P50

[10] HOLLAN L, 1974, I PHYS C SER, V24, P22