STUDY OF MOLAR FRACTION EFFECT IN PCI3-IN-H2 SYSTEM

被引:23
作者
CLARKE, RC [1 ]
机构
[1] ROY RADAR ESTAB,LEIGH SINTON RD,MALVERN,WORCESTERSHIRE,ENGLAND
关键词
D O I
10.1016/0022-0248(74)90122-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:166 / 168
页数:3
相关论文
共 10 条
[1]  
CAIRNS B, 1970, J ELECTROCHEM SOC, V117, pC197
[2]   MEASUREMENT OF CARRIER-CONCENTRATION PROFILES IN EPITAXIAL INDIUM PHOSPHIDE [J].
CARDWELL, MJ ;
PEART, RF .
ELECTRONICS LETTERS, 1973, 9 (04) :88-89
[3]   PREPARATION OF HIGH PURITY EPITAXIAL INF [J].
CLARKE, RC ;
JOYCE, BD ;
WILGOSS, WHE .
SOLID STATE COMMUNICATIONS, 1970, 8 (14) :1125-&
[4]  
CLARKE RC, 1971, J CRYSTAL GROWTH, V11, P243
[5]  
CLARKE RE, TO BE PUBLISHED
[7]  
HALES MC, 1971, 3RD P INT S GAAS I 9, P50
[9]  
Kubaschewski O., 1967, METALLURGICAL THERMO
[10]  
REED TB, 1969, SOLID STATE RES REPT