INP GUNN-EFFECT DEVICES FOR MILLIMETER-WAVE AMPLIFIERS AND OSCILLATORS

被引：8

作者：

HAMILTON, RJ

FAIRMAN, RD

LONG, SI

OMORI, M

FANK, FB

机构：

[1] VARIAN ASSOC,DIV SOLID STATE W,MAT & DEVICES ENGN GRP,PALO ALTO,CA 94303

[2] VARIAN ASSOC,DIV SOLID STATE W,PALO ALTO,CA 94303

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1976年 / 24卷 / 11期

关键词：

D O I：

10.1109/TMTT.1976.1128959

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：775 / 780

页数：6

相关论文

共 23 条

[1] NOISE PERFORMANCE OF INP REFLECTION AMPLIFIERS IN Q BAND
BASKARAN, S
ROBSON, PN
[J]. ELECTRONICS LETTERS, 1972, 8 (05) : 137 - &
[2] CAIRNS B, 1970, J ELECTROCHEM SOC, V117, pC197
[3] CAIRNS B, 1968, J ELECTROCHEM SOC, V115, pC327
[4] MEASUREMENT OF CARRIER-CONCENTRATION PROFILES IN EPITAXIAL INDIUM PHOSPHIDE
CARDWELL, MJ
PEART, RF
[J]. ELECTRONICS LETTERS, 1973, 9 (04) : 88 - 89
[5] STUDY OF MOLAR FRACTION EFFECT IN PCI3-IN-H2 SYSTEM
CLARKE, RC
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 23 (02) : 166 - 168
[6] PREPARATION OF HIGH PURITY EPITAXIAL INF
CLARKE, RC
JOYCE, BD
WILGOSS, WHE
[J]. SOLID STATE COMMUNICATIONS, 1970, 8 (14) : 1125 - &
[7] COLLIVER DJ, 1973, 4TH P CORN EL ENG C, P11
[8] INDIUM-PHOSPHIDE CW TRANSFERRED-ELECTRON AMPLIFIERS
CORLETT, RM
GRIFFITH, I
PURCELL, JJ
[J]. ELECTRONICS LETTERS, 1974, 10 (15) : 307 - 308
[9] HIGH CW POWER K-BAND GUNN OSCILLATORS
FANK, FB
DAY, GF
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (03) : 339 - &
[10] TEMPERATURE-DEPENDENCE OF VELOCITY-FIELD CHARACTERISTIC OF ELECTRONS IN INP
FAWCETT, W
HILL, G
[J]. ELECTRONICS LETTERS, 1975, 11 (04) : 80 - 81