TEMPERATURE-DEPENDENCE OF VELOCITY-FIELD CHARACTERISTIC OF ELECTRONS IN INP

被引：22

作者：

FAWCETT, W

HILL, G

机构：

[1] ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND

[2] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,MAPPIN ST,SHEFFIELD S1 3JD,ENGLAND

来源：

ELECTRONICS LETTERS | 1975年 / 11卷 / 04期

关键词：

D O I：

10.1049/el:19750060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：80 / 81

页数：2

共 8 条

[1] COMPARISON OF HOT ELECTRON DIFFUSION RATES FOR GAAS AND INP [J].

BAUHAHN, PE ;

HADDAD, GI ;

MASNARI, NA .

ELECTRONICS LETTERS, 1973, 9 (19) :460-461

[2] DIFFUSION OF ELECTRONS IN SEMICONDUCTORS IN HIGH ELECTRIC-FIELDS [J].

CHEUNG, PS ;

HEARN, CJ .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (13) :1563-&

[3] HIGH-FIELD TRANSPORT IN GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE [J].

FAWCETT, W ;

HERBERT, DC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (09) :1641-1654

[4] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&

[5] DIFFUSION OF HOT-ELECTRONS IN N INDIUM PHOSPHIDE [J].

HAMMAR, C ;

VINTER, B .

ELECTRONICS LETTERS, 1973, 9 (01) :9-10

[6] BAND STRUCTURE AND HIGH-FIELD TRANSPORT PROPERTIES OF INP [J].

JAMES, LW ;

VANDYKE, JP ;

HERMAN, F ;

CHANG, DM .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10) :3998-+

[7] PARAMETERS OF ELECTRON-TRANSFER IN INP [J].

JAMES, LW .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2746-2749

[8] TEMPERATURE-DEPENDENCE OF SUBTHRESHOLD VELOCITY-FIELD CHARACTERISTIC FOR EPITAXIAL INP [J].

MAJERFELD, A ;

POTTER, KE ;

ROBSON, PN .

ELECTRONICS LETTERS, 1975, 11 (04) :81-82

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