GAS PHASE COMPOSITION IN GA-ASCL3-H2 SYSTEM FOR EPITAXIAL DEPOSITION OF GAAS

被引：11

作者：

HAMMERLING, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1971年 / 9卷 / 01期

关键词：

D O I：

10.1016/0022-0248(71)90227-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：171 / +

页数：1

共 18 条

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[6]

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[7] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J].

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EFFER, D ;

EVANS, PR .

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[8]

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MEHAL EW, 1966, ELECTROCHEM TECHNOL, V4, P540

[10] REACTIONS OF GALLIUM ARSENIDE WITH WATER VAPOR AND HYDROGEN CHLORIDE GAS [J].

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HELLBARDT, G .

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