THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH

被引：51

作者：

BOUCHER, A

HOLLAN, L

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 07期

关键词：

D O I：

10.1149/1.2407686

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：932 / &

共 8 条

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[3]

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[7] INFLUENCE OF SUBSTRATE TEMPERATURE ON GAAS EPITAXIAL DEPOSITION RATES [J].

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[8] VAPOR PHASE EQUILIBRIA IN GALLIUM-CHLORINE ANDGALLIUM ARSENIDE-CHLORINE SYSTEMS [J].

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