INFLUENCE OF SUBSTRATE TEMPERATURE ON GAAS EPITAXIAL DEPOSITION RATES

[1] KINETICS OF SILICON CRYSTAL GROWTH FROM SICL4 DECOMPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (12) : 1171 - 1175

[2] DAY GF, 1966, AF336151988 CONTR

[3] MAGOMEDOV KA, 1965, SOV PHYS CRYSTALLOGR, V9, P756

[4] MAGOMEDOV KA, 1964, KRISTALLOGRAFIYA, V9, P902

[5] ROOM TEMPERATURE CHEMICAL POLISHING OF GE AND GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1425 - 1428

[6] KINETICS OF ATTACK OF HIGH-TEMPERATURE MOLYBDENUM AND TUNGSTEN BY ATOMIC OXYGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (04) : 305 - +

[7] SANGSTER RC, 1962, COMPOUNDS SEMICONDUC, P241

[8] EPITAXIAL DEPOSITION OF GAAS IN AN ARGON ATMOSPHERE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (04) : 410 - &

[9] WILLARDSON RK, 1962, COMPOUND SEMICOND ED, P241

[1] KINETICS OF SILICON CRYSTAL GROWTH FROM SICL4 DECOMPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (12) : 1171 - 1175

[2] DAY GF, 1966, AF336151988 CONTR

[3] MAGOMEDOV KA, 1965, SOV PHYS CRYSTALLOGR, V9, P756

[4] MAGOMEDOV KA, 1964, KRISTALLOGRAFIYA, V9, P902

[5] ROOM TEMPERATURE CHEMICAL POLISHING OF GE AND GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1425 - 1428

[6] KINETICS OF ATTACK OF HIGH-TEMPERATURE MOLYBDENUM AND TUNGSTEN BY ATOMIC OXYGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (04) : 305 - +

[7] SANGSTER RC, 1962, COMPOUNDS SEMICONDUC, P241

[8] EPITAXIAL DEPOSITION OF GAAS IN AN ARGON ATMOSPHERE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (04) : 410 - &

[9] WILLARDSON RK, 1962, COMPOUND SEMICOND ED, P241