DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS

被引：114

作者：

HUBER, AM

LINH, NT

VALLADON, M

DEBRUN, JL

MARTIN, GM

MITONNEAU, A

MIRCEA, A

机构：

[1] CNRS,SERV CYCLOTRON,F-45045 ORLEANS,FRANCE

[2] LEP,F-94450 LIMEIL BREVANNES,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 06期

关键词：

D O I：

10.1063/1.326482

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

From the direct comparison between quantitative atomic oxygen concentration and electronic deep-energy-level concentration in GaAs, it is concluded that oxygen is not involved, either directly or as part of a complex defect, in the origin of the main electron trap at EC-0.75 eV.

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收藏

页码：4022 / 4026

页数：5

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共 34 条

[1] DISLOCATIONS AND PRECIPITATES IN GAAS INJECTION LASERS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) :1973-&

[2] ON PREPARATION OF HIGH PURITY GALLIUM ARSENIDE [J].

AINSLIE, NG ;

WOODS, JF ;

BLUM, SE .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) :2391-&

[3]

ANDRE E, COMMUNICATION

[4] ENERGY-LEVEL MODEL FOR HIGH-RESISTIVITY GALLIUM ARSENIDE [J].

BLANC, J ;

WEISBERG, LR .

NATURE, 1961, 192 (479) :155-&

[5] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :225-&

[6] SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION [J].

BLEICHER, M ;

LANGE, E .

SOLID-STATE ELECTRONICS, 1973, 16 (03) :375-380

[7]

BOIS D, 1977, J PHYS LETT, V38, P351

[8] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE [J].

BROZEL, MR ;

CLEGG, JB ;

NEWMAN, RC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) :1331-1339

[9] INFRARED DONOR-ACCEPTOR PAIR SPECTRA INVOLVING DEEP OXYGEN DONOR IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

HENRY, CH ;

FROSCH, CJ .

PHYSICAL REVIEW, 1968, 168 (03) :812-&

[10] ELECTRON-CAPTURE (INTERNAL) LUMINESCENCE FROM OXYGEN DONOR IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

HENRY, CH .

PHYSICAL REVIEW, 1968, 176 (03) :928-&

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