DISLOCATIONS AND PRECIPITATES IN GAAS INJECTION LASERS

被引：46

作者：

ABRAHAMS, MS

BUIOCCHI, CJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 05期

关键词：

D O I：

10.1063/1.1708650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1973 / &

共 13 条

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[2] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

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[3] ELECTRICAL MEASUREMENTS + X-RAY LATTICE PARAMETER MEASUREMENTS OF GAAS DOPED WITH SE TE ZN + CD + STRESS EFFECTS OF THESE ELEMENTS AS DIFFUSANTS IN GAAS [J].

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LUBLIN, P .

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[4]

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[5] SPATIAL DISTRIBUTION OF RADIATION FROM GAAS LASERS [J].

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KINGSLEY, JD .

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[6]

FRANCOMBE MH, 1964, SINGLE CRYSTAL FI ED, P139

[7]

GOLDSTEIN B, 1962, PREPARATION 3 5 COMP, P345

[8]

NELSON H, 1963, RCA REV, V24, P603

[9] SEMICONDUCTOR LASERS [J].

REDIKER, RH .

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[10] IMPROVED PERFORMANCE OF GAAS1-XPX LASER DIODES [J].

TIETJEN, JJ ;

OCHS, SA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (02) :180-&

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