SEMICONDUCTOR LASERS

被引：9

作者：

REDIKER, RH

机构：

来源：

PHYSICS TODAY | 1965年 / 18卷 / 02期

关键词：

D O I：

10.1063/1.3047183

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

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页码：42 / &

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PELOKE, JR ;

MCDERMOTT, PS .

APPLIED PHYSICS LETTERS, 1964, 4 (01) :13-&

[2] INTERFEROMETRIC MEASUREMENT OF LINEWIDTH + NOISE IN GAAS LASERS ( LOW NOISE LINEWIDTH AT HALF POWER LESS THAN 5 TIMES 107 CPS E ) [J].

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SMITH, AW .

APPLIED PHYSICS LETTERS, 1964, 4 (11) :196-&

[3]

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[5]

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DURAFFOURG, G .

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[8] PBTE DIODE LASER ( LAMBDA 6.5 MU 12 DEGREES K E ) [J].

BUTLER, JF ;

REDIKER, RH ;

CALAWA, AR ;

HARMAN, TC ;

PHELAN, RJ ;

STRAUSS, AJ .

APPLIED PHYSICS LETTERS, 1964, 5 (04) :75-&

[9]

BUTLER JF, 1964, SOLID STATE COMMUN, V2, P301

[10]

DALRYMPLE GF, 1964, P IEEE, V52

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