PBTE DIODE LASER ( LAMBDA 6.5 MU 12 DEGREES K E )

被引：71

作者：

BUTLER, JF

REDIKER, RH

CALAWA, AR

HARMAN, TC

PHELAN, RJ

STRAUSS, AJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1964年 / 5卷 / 04期

关键词：

D O I：

10.1063/1.1754062

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：75 / &

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[3] BUTLER JW, TO BE PUBLISHED
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[8] SEMICONDUCTOR DIODE MASERS IN (INXGA1-X)AS
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[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (08) : 1154 - &
[9] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS
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[J]. APPLIED PHYSICS LETTERS, 1962, 1 (03) : 62 - 64
[10] INFRARED INSB LASER DIODE IN HIGH MAGNETIC FIELDS
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[J]. APPLIED PHYSICS LETTERS, 1963, 3 (09) : 143 - 145