SEMICONDUCTOR DIODE MASERS IN (INXGA1-X)AS

被引：44

作者：

MELNGAILIS, I

STRAUSS, AJ

REDIKER, RH

机构：

来源：

PROCEEDINGS OF THE IEEE | 1963年 / 51卷 / 08期

关键词：

D O I：

10.1109/PROC.1963.2469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1154 / &

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