INFRARED INSB LASER DIODE IN HIGH MAGNETIC FIELDS

被引：94

作者：

PHELAN, RJ

CALAWA, AR

REDIKER, RH

KEYES, RJ

LAX, B

机构：

来源：

关键词：

D O I：

10.1063/1.1753905

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：143 / 145

页数：3

共 13 条

[1] BENOIT C, 1962, P INTERNATIONAL C PH, P875
[2] GALEENER FL, 1963, PHYS REV LETT, V10, P472
[3] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS
HALL, RN
CARLSON, RO
SOLTYS, TJ
FENNER, GE
KINGSLEY, JD
[J]. PHYSICAL REVIEW LETTERS, 1962, 9 (09) : 366 - &
[4] COHERENT (VISIBLE) LIGHT EMISSION FROM GA(AS1-XPX) JUNCTIONS
HOLONYAK, N
BEVACQUA, SF
[J]. APPLIED PHYSICS LETTERS, 1962, 1 (04) : 82 - 83
[5] MASER ACTION IN INAS DIODES
MELNGAILIS, I
[J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 176 - 178
[6] SEMICONDUCTOR DIODE MASERS IN (INXGA1-X)AS
MELNGAILIS, I
STRAUSS, AJ
REDIKER, RH
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (08) : 1154 - &
[7] MAGNETICALLY TUNABLE CW-INAS DIODE MASER
MELNGAILIS, I
REDIKER, RH
[J]. APPLIED PHYSICS LETTERS, 1963, 2 (11) : 202 - 204
[8] MOSS TS, 1957, P PHYS SOC LOND B, V70, P778
[9] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS
NATHAN, MI
DUMKE, WP
BURNS, G
DILL, FH
LASHER, G
[J]. APPLIED PHYSICS LETTERS, 1962, 1 (03) : 62 - 64
[10] SEMICONDUCTOR MASER OF GAAS
QUIST, TM
REDIKER, RH
KEYES, RJ
KRAG, WE
LAX, B
MCWHORTER, AL
ZEIGLER, HJ
[J]. APPLIED PHYSICS LETTERS, 1962, 1 (04) : 91 - 92