ELECTRON-CAPTURE (INTERNAL) LUMINESCENCE FROM OXYGEN DONOR IN GALLIUM PHOSPHIDE

被引：111

作者：

DEAN, PJ

HENRY, CH

机构：

来源：

PHYSICAL REVIEW | 1968年 / 176卷 / 03期

关键词：

D O I：

10.1103/PhysRev.176.928

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：928 / &

相关论文

共 44 条

[1] AGGARWAL RL, 1965, PHYS REV, V140, P1246
[2] EFFECT OF UNIAXIAL STRESS ON EXICTATION SPECTRA OF DONORS IN SILICON
AGGARWAL, RL
RAMDAS, AK
[J]. PHYSICAL REVIEW, 1965, 137 (2A): : A602 - &
[3] BALSLEV I, 1966, J PHYS SOC JPN, VS 21, P101
[4] OPTICAL ABSORPTION SPECTRA OF ARSENIC AND PHOSPHORUS IN SILICON
BICHARD, JW
GILES, JC
[J]. CANADIAN JOURNAL OF PHYSICS, 1962, 40 (10) : 1480 - &
[5] ABSORPTION AND LUMINESCENCE OF EXCITONS AT NEUTRAL DONORS IN GALLIUM PHOSPHIDE
DEAN, PJ
[J]. PHYSICAL REVIEW, 1967, 157 (03): : 655 - &
[6] INFRARED DONOR-ACCEPTOR PAIR SPECTRA INVOLVING DEEP OXYGEN DONOR IN GALLIUM PHOSPHIDE
DEAN, PJ
HENRY, CH
FROSCH, CJ
[J]. PHYSICAL REVIEW, 1968, 168 (03): : 812 - &
[7] 2-ELECTRON TRANSITIONS IN LUMINESCENCE OF EXCITONS BOUND TO NEUTRAL DONORS IN GALLIUM PHOSPHIDE
DEAN, PJ
CUTHBERT, JD
THOMAS, DG
LYNCH, RT
[J]. PHYSICAL REVIEW LETTERS, 1967, 18 (04) : 122 - &
[8] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE
DEAN, PJ
FROSCH, CJ
HENRY, CH
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5631 - &
[9] FAULKNER R, PERSONAL COMMUNICATI
[10] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS
FAULKNER, RA
[J]. PHYSICAL REVIEW, 1968, 175 (03): : 991 - &

← 1 2 3 4 5 →