EFFECT OF UNIAXIAL STRESS ON EXICTATION SPECTRA OF DONORS IN SILICON

被引：60

作者：

AGGARWAL, RL

RAMDAS, AK

机构：

来源：

PHYSICAL REVIEW | 1965年 / 137卷 / 2A期

关键词：

D O I：

10.1103/PhysRev.137.A602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：A602 / &

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