OPTICAL ABSORPTION SPECTRA OF ARSENIC AND PHOSPHORUS IN SILICON

[1] BRUGEL W, 1962, INTRODUCTION INFRARE, P239

[2] BRUGEL W, 1962, INTRODUCTION INFRARE, P122

[3] DEXTER DL, 1958, SOLID STATE PHYS, V6, P359

[4] ABSORPTION SPECTRUM OF BISMUTH-DOPED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (04) : 315 - 317

[5] ABSORPTION SPECTRUM OF ARSENIC DOPED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 7 (2-3) : 236 - 239

[6] HROSTOWSKI HJ, 1958, J PHYS CHEM SOLIDS, V4, P184

[7] THEORY OF DONOR STATES IN SILICON [J]. PHYSICAL REVIEW, 1955, 98 (04): : 915 - 922

[8] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 257 - 320

[9] THE OPTICAL PROPERTIES OF SEMICONDUCTORS .1. THE REFLECTIVITY OF GERMANIUM SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1949, 76 (10): : 1530 - 1530

[10] BROADENING OF IMPURITY LEVELS IN SILICON [J]. PHYSICAL REVIEW, 1955, 100 (02): : 592 - 602

[1] BRUGEL W, 1962, INTRODUCTION INFRARE, P239

[2] BRUGEL W, 1962, INTRODUCTION INFRARE, P122

[3] DEXTER DL, 1958, SOLID STATE PHYS, V6, P359

[4] ABSORPTION SPECTRUM OF BISMUTH-DOPED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (04) : 315 - 317

[5] ABSORPTION SPECTRUM OF ARSENIC DOPED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 7 (2-3) : 236 - 239

[6] HROSTOWSKI HJ, 1958, J PHYS CHEM SOLIDS, V4, P184

[7] THEORY OF DONOR STATES IN SILICON [J]. PHYSICAL REVIEW, 1955, 98 (04): : 915 - 922

[8] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 257 - 320

[9] THE OPTICAL PROPERTIES OF SEMICONDUCTORS .1. THE REFLECTIVITY OF GERMANIUM SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1949, 76 (10): : 1530 - 1530

[10] BROADENING OF IMPURITY LEVELS IN SILICON [J]. PHYSICAL REVIEW, 1955, 100 (02): : 592 - 602