SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM

被引：934

作者：

KOHN, W

机构：

来源：

SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS | 1957年 / 5卷

关键词：

D O I：

10.1016/S0081-1947(08)60104-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：257 / 320

页数：64

共 80 条

[1]

ABRAGAM A, 1956, CR HEBD ACAD SCI, V243, P576

[2] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].

BARDEEN, J ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1950, 80 (01) :72-80

[3]

BOWERS RF, COMMUNICATION

[4] OPTICAL EFFECTS IN BULK SILICON AND GERMANIUM [J].

BRIGGS, HB .

PHYSICAL REVIEW, 1950, 77 (02) :287-287

[5] OPTICAL INVESTIGATIONS OF IMPURITY LEVELS IN SILICON [J].

BURSTEIN, E ;

BELL, EE ;

DAVISSON, JW ;

LAX, M .

JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) :849-852

[6] ABSORPTION SPECTRA OF IMPURITIES IN SILICON .1. GROUP-III ACCEPTORS [J].

BURSTEIN, E ;

PICUS, G ;

HENVIS, B ;

WALLIS, R .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) :65-74

[7]

BURSTEIN E, 1954, NOV PHOT C ATL CIT, P353

[8] IMPURITY CENTERS IN GE AND SI [J].

BURTON, JA .

PHYSICA, 1954, 20 (10) :845-854

[9] PROPERTIES OF SILICON DOPED WITH MANGANESE [J].

CARLSON, RO .

PHYSICAL REVIEW, 1956, 104 (04) :937-941

[10] PROPERTIES OF GOLD-DOPED SILICON [J].

COLLINS, CB ;

CARLSON, RO ;

GALLAGHER, CJ .

PHYSICAL REVIEW, 1957, 105 (04) :1168-1173

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