SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION

被引：84

作者：

BLEICHER, M ^{[1
]}

LANGE, E ^{[1
]}

机构：

[1] TECH UNIV MUNICH, INST TECH ELEKTR, MUNICH 8, WEST GERMANY

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 03期

关键词：

D O I：

10.1016/0038-1101(73)90012-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：375 / 380

页数：6

共 10 条

[1] TRANSIENT PHENOMENA IN CAPACITANCE OF GAAS SCHOTTKY BARRIER DIODES
FURUKAWA, Y
ISHIBASHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (09) : 837 - +
[2] TRAPPING EFFECTS IN AU-N-TYPE GAAS SCHOTTKY BARRIER DIODES
FURUKAWA, Y
ISHIBASHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) : 503 - +
[3] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
GOODMAN, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &
[4] SAH CT, 1967, PR INST ELECTR ELECT, V55, P654
[5] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS
SAH, CT
FORBES, L
ROSIER, LL
TASCH, AF
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +
[6] EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE
SCHIBLI, E
MILNES, AG
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (03) : 323 - +
[7] CAPACITANCE MEASUREMENTS ON AU-GAAS SCHOTTKY BARRIERS
SENECHAL, RR
BASINSKI, J
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4581 - +
[8] CAPACITANCE OF JUNCTIONS ON GOLD-DOPED SILICON
SENECHAL, RR
BASINSKI, J
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 3723 - +
[9] DETERMINATION OF DEEP CENTERS IN CONDUCTING GALLIUM ARSENIDE
WILLIAMS, R
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3411 - &
[10] A NEW METHOD FOR DETERMINATION OF DEEP-LEVEL IMPURITY CENTERS IN SEMICONDUCTORS
ZOHTA, Y
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (07) : 284 - &

← 1 →