THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS

被引：468

作者：

SAH, CT

FORBES, L

ROSIER, LL

TASCH, AF

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 06期

关键词：

D O I：

10.1016/0038-1101(70)90064-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：759 / +

页数：1

共 25 条

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[10]

ROSIER LL, TO BE PUBLISHED

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