EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE

被引：128

作者：

SCHIBLI, E

MILNES, AG

机构：

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 03期

关键词：

D O I：

10.1016/0038-1101(68)90044-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：323 / +

页数：1

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