TUNABLE HIGH-PASS FILTER CHARACTERISTICS OF A SPECIAL MOS TRANSISTOR

被引：11

作者：

REDDI, VGK

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1965年 / ED12卷 / 11期

关键词：

D O I：

10.1109/T-ED.1965.15613

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：581 / +

页数：1

共 11 条

[1] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J].

CHYNOWETH, AG .

PHYSICAL REVIEW, 1958, 109 (05) :1537-1540

[2] PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].

GARRETT, CGB ;

BRATTAIN, WH .

PHYSICAL REVIEW, 1955, 99 (02) :376-387

[3] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

DEAL, BE ;

SNOW, EH ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+

[4] DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR [J].

IHANTOLA, HKJ ;

MOLL, JL .

SOLID-STATE ELECTRONICS, 1964, 7 (06) :423-430

[5] DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J].

LUDWIG, GW ;

WATTERS, RL .

PHYSICAL REVIEW, 1956, 101 (06) :1699-1701

[6] AVALANCHE BREAKDOWN IN SILICON [J].

MCKAY, KG .

PHYSICAL REVIEW, 1954, 94 (04) :877-884

[7] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J].

MOLL, JL ;

VANOVERSTRAETEN, R .

SOLID-STATE ELECTRONICS, 1963, 6 (02) :147-157

[8] FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS [J].

SAH, CT ;

REDDI, VGK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :345-+

[9] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :324-+

[10] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

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