DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR

被引：125

作者：

IHANTOLA, HKJ

MOLL, JL

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(64)90039-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：423 / 430

页数：8

共 8 条

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[4] PHYSICAL PHENOMENON RESPONSIBLE FOR SATURATION CURRENT IN FIELD EFFECT DEVICES
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[5] EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS
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[6] A UNIPOLAR FIELD-EFFECT TRANSISTOR
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[7] AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES
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[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 285 - 299
[8] TFT - NEW THIN-FILM TRANSISTOR
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[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (06): : 1462 - &