CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS

被引：145

作者：

MOLL, JL

VANOVERSTRAETEN, R

机构：

来源：

SOLID-STATE ELECTRONICS | 1963年 / 6卷 / 02期

关键词：

D O I：

10.1016/0038-1101(63)90009-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：147 / 157

页数：11

共 10 条

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[7] SECONDARY MULTIPLICATION IN SILICON [J].

MOLL, JJ ;

MEYER, NI .

SOLID-STATE ELECTRONICS, 1961, 3 (02) :155-158

[8] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

SOLID-STATE ELECTRONICS, 1961, 2 (01) :35-+

[9] THEORY OF ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].

WOLFF, PA .

PHYSICAL REVIEW, 1954, 95 (06) :1415-1420

[10]

1961, 4 STANF EL LAB Q STA

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