CAPACITANCE OF JUNCTIONS ON GOLD-DOPED SILICON

被引：84

作者：

SENECHAL, RR

BASINSKI, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 08期

关键词：

D O I：

10.1063/1.1656847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3723 / +

页数：1

共 22 条

[1] RECOMBINATION PROPERTIES OF GOLD IN SILICON [J].

BEMSKI, G .

PHYSICAL REVIEW, 1958, 111 (06) :1515-1518

[2] PROPERTIES OF GOLD IN SILICON [J].

BULLIS, WM .

SOLID-STATE ELECTRONICS, 1966, 9 (02) :143-&

[3] ELECTRICAL PROPERTIES OF N-TYPE SILICON DOPED WITH GOLD [J].

BULLIS, WM ;

STRIETER, FJ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) :314-&

[4] PROPERTIES OF SILICON AND GERMANIUM .2. [J].

CONWELL, EM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1281-1300

[5] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES [J].

COWLEY, AM .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3024-&

[6] THE CHARGE AND POTENTIAL DISTRIBUTIONS AT THE ZINC OXIDE ELECTRODE [J].

DEWALD, JF .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (03) :615-639

[7] GOLD AS A RECOMBINATION CENTRE IN SILICON [J].

FAIRFIELD, JM ;

GOKHALE, BV .

SOLID-STATE ELECTRONICS, 1965, 8 (08) :685-+

[8] TRAPPING EFFECTS IN AU-N-TYPE GAAS SCHOTTKY BARRIER DIODES [J].

FURUKAWA, Y ;

ISHIBASHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) :503-+

[9] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[10]

HAYNES JR, 1958, B AM PHYS SOC, V3, P30

← 1 2 3 →