ELECTRICAL PROPERTIES OF N-TYPE SILICON DOPED WITH GOLD

被引：36

作者：

BULLIS, WM

STRIETER, FJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 01期

关键词：

D O I：

10.1063/1.1655751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：314 / &

共 18 条

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