VAPOR GROWTH OF INP FOR MESFETS

[11] QUANTITATIVE-ANALYSIS OF OXYGEN IN THIN EPITAXIAL LAYERS OF GAAS BY SIMS [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 543 - 546

[12] HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

[13] HUBER AM, 1979, 2ND INT C SEC ION MA

[14] VERY-HIGH-PURITY INP LPE LAYERS [J]. ELECTRONICS LETTERS, 1977, 13 (22) : 682 - 683

[15] GROWTH OF EPITAXIAL GAAS STRUCTURES FOR HIGH-EFFICIENCY IMPATTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) : 760 - 769

[16] FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS AT 300K AND 77K WITH TYPICAL ACTIVE-LAYER DOPING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (05) : 519 - 519

[17] MALONEY TJ, 1977, J APPL PHYS, V48, P295

[18] THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 161 - &

[19] STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 619 - 627

[20] MORKOC H, 1979, I PHYS C SER, V45, P295

[11] QUANTITATIVE-ANALYSIS OF OXYGEN IN THIN EPITAXIAL LAYERS OF GAAS BY SIMS [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 543 - 546

[12] HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

[13] HUBER AM, 1979, 2ND INT C SEC ION MA

[14] VERY-HIGH-PURITY INP LPE LAYERS [J]. ELECTRONICS LETTERS, 1977, 13 (22) : 682 - 683

[15] GROWTH OF EPITAXIAL GAAS STRUCTURES FOR HIGH-EFFICIENCY IMPATTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) : 760 - 769

[16] FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS AT 300K AND 77K WITH TYPICAL ACTIVE-LAYER DOPING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (05) : 519 - 519

[17] MALONEY TJ, 1977, J APPL PHYS, V48, P295

[18] THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 161 - &

[19] STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 619 - 627

[20] MORKOC H, 1979, I PHYS C SER, V45, P295