QUANTITATIVE-ANALYSIS OF OXYGEN IN THIN EPITAXIAL LAYERS OF GAAS BY SIMS

被引：14

作者：

HUBER, AM ^{[1
]}

MORILLOT, G ^{[1
]}

LINH, NT ^{[1
]}

DEBRUN, JL ^{[1
]}

VALLADON, M ^{[1
]}

机构：

[1] CNRS,SERV CYCLOTRON,F-45045 ORLEANS,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS | 1978年 / 149卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(78)90923-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：543 / 546

页数：4

共 7 条

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[2] DEBRUN JL, 1977, 7TH P IN VAC C 3RD I
[3] HUBER AM, 1970, GALLIUM ARSENIDE REL, P118
[4] SUPPRESSION OF DEFECT FORMATION IN GAAS LAYERS BY REMOVING OXYGEN IN LPE
ISHII, M
KAN, H
SUSAKI, W
OGATA, Y
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 375 - 377
[5] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH
KNIGHT, JR
EFFER, D
EVANS, PR
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &
[6] MODEL RELATING ELECTRICAL-PROPERTIES AND IMPURITY CONCENTRATIONS IN SEMI-INSULATING GAAS
LINDQUIST, PF
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1262 - 1267
[7] Massies J., 1976, Revue Technique Thomson-CSF, V8, P5