SUPPRESSION OF DEFECT FORMATION IN GAAS LAYERS BY REMOVING OXYGEN IN LPE

被引：21

作者：

ISHII, M

KAN, H

SUSAKI, W

OGATA, Y

机构：

[1] MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN

[2] MITSUBISHI ELECT CORP,CENT RES LAB,AMAGASAKI,HYOGO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 06期

关键词：

D O I：

10.1063/1.89092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：375 / 377

页数：3

共 9 条

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ROZGONYI, GA ;

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MARCOS, HM ;

HASZKO, SE .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :481-484

[2] CONTINUOUS OPERATION OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS WITH 30 DEGREES C HALF-LIVES EXCEEDING 1000-H [J].

HARTMAN, RL ;

DYMENT, JC ;

HWANG, CJ ;

KUHN, M .

APPLIED PHYSICS LETTERS, 1973, 23 (04) :181-183

[3] RELIABILITY OF DH GAAS LASERS AT ELEVATED-TEMPERATURES [J].

HARTMAN, RL ;

DIXON, RW .

APPLIED PHYSICS LETTERS, 1975, 26 (05) :239-242

[4] ETCH PIT OBSERVATION OF VERY THIN [001]-GAAS LAYER BY MOLTEN KOH [J].

ISHII, M ;

HIRANO, R ;

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ITO, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (04) :645-650

[5] CONTINUOUS OPERATION OVER 10000-H OF GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASER WITHOUT LATTICE MISMATCH COMPENSATION [J].

KAN, H ;

NAMIZAKI, H ;

ISHII, M ;

ITO, A .

APPLIED PHYSICS LETTERS, 1975, 27 (03) :138-139

[6]

KISHINO S, 1975, 7TH C SOL STAT DEV T, P91

[7] CONTINUOUS OPERATION OVER 2500 H OF DOUBLE HETEROSTRUCTURE LASER-DIODES WITH OUTPUT POWERS MORE THAN 80 MW [J].

NAKADA, O ;

CHINONE, N ;

NAKAMURA, S ;

NAKASHIM.H ;

ITO, R .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (09) :1485-1486

[8] DEGRADATION OF (GA-SINGLE-BOND-AL)AS DOUBLE HETEROSTRUCTURE DIODE LASERS [J].

NANNICHI, Y ;

HAYASHI, I .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :126-132

[9]

YONEZU H, 1974, JPN SOC APPL PHYS S, V43, P59

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