ETCH PIT OBSERVATION OF VERY THIN [001]-GAAS LAYER BY MOLTEN KOH

被引：31

作者：

ISHII, M ^{[1
]}

HIRANO, R ^{[1
]}

KAN, H ^{[1
]}

ITO, A ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 04期

关键词：

D O I：

10.1143/JJAP.15.645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：645 / 650

页数：6

共 11 条

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[7]

Richter H., 1974, Kristall und Technik, V9, P1041, DOI 10.1002/crat.19740090909

[8] DEFECT STRUCTURE OF GAP CRYSTALS GROWN FROM GALLIUM SOLUTIONS VAPOR PHASE AND LIQUID PHASE EPITAXIAL DEPOSITION [J].

SAUL, RH .

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[9]

SCHELL MA, 1957, Z METALLK, V48, P158

[10] DISLOCATIONS IN GALLIUM ARSENIDE GROWN FROM GALLIUM BY A TRAVELLING SOLVENT METHOD [J].

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JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2913-+

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