DISLOCATIONS IN GALLIUM ARSENIDE GROWN FROM GALLIUM BY A TRAVELLING SOLVENT METHOD

被引：18

作者：

WEINSTEIN, M

LABELLE, HE

MLAVSKY, AI

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 07期

关键词：

D O I：

10.1063/1.1782153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2913 / +

页数：1

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[3] GATOS HC, 1960, PROPERTIES ELEMENTAL, P225
[4] CRYSTAL GROWTH OF GAAS FROM GA BY A TRAVELING SOLVENT METHOD
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WEINSTEIN, M
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[5] GROWTH OF GAP CRYSTALS + P-N JUNCTIONS BY TRAVELING SOLVENT METHOD
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MLAVSKY, AI
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1892 - &