GROWTH OF GAP CRYSTALS + P-N JUNCTIONS BY TRAVELING SOLVENT METHOD

[1] A NEW METHOD OF GAP GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (11) : 1150 - 1153

[2] FULLER LS, 1962, J ELECTROCHEM SOC, V109, P880

[3] GUIRE RJ, UNPUBLISHED

[4] THE DIRECT-INDIRECT TRANSITION IN GA(AS1-XPX) P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1963, 3 (03) : 47 - 49

[5] MILLER JF, 1960, OCT FALL M EL SOC HO

[6] CRYSTAL GROWTH OF GAAS FROM GA BY A TRAVELING SOLVENT METHOD [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2885 - &

[7] GERMANIUM-DOPED GALLIUM ARSENIDE TUNNEL DIODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) : 716 - 716

[8] WOLFF G, 1954, PHYS REV, V94, P753

[9] Wolff G. A., 1958, HALBLEITER PHOSPHORE, P463

[1] A NEW METHOD OF GAP GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (11) : 1150 - 1153

[2] FULLER LS, 1962, J ELECTROCHEM SOC, V109, P880

[3] GUIRE RJ, UNPUBLISHED

[4] THE DIRECT-INDIRECT TRANSITION IN GA(AS1-XPX) P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1963, 3 (03) : 47 - 49

[5] MILLER JF, 1960, OCT FALL M EL SOC HO

[6] CRYSTAL GROWTH OF GAAS FROM GA BY A TRAVELING SOLVENT METHOD [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2885 - &

[7] GERMANIUM-DOPED GALLIUM ARSENIDE TUNNEL DIODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) : 716 - 716

[8] WOLFF G, 1954, PHYS REV, V94, P753

[9] Wolff G. A., 1958, HALBLEITER PHOSPHORE, P463