DEGRADATION OF (GA-SINGLE-BOND-AL)AS DOUBLE HETEROSTRUCTURE DIODE LASERS

[1] ABLOVA MS, 1971, FIZ TVERD TELA+, V12, P2672

[2] BIARD JR, 1966, P INT S GAAS, P113

[3] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044

[4] DYMENT JC, 1973, INT ELECTRON DEVICES

[5] THERMAL EXPANSION OF ALAS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3926 - +

[6] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4113 - 4119

[7] EFFECTS OF ADSORPTION ON INDENTATION DEFORMATION OF NON-METALLIC SOLIDS [J]. PHILOSOPHICAL MAGAZINE, 1968, 18 (151) : 73 - +

[8] CONTINUOUS OPERATION OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS WITH 30 DEGREES C HALF-LIVES EXCEEDING 1000-H [J]. APPLIED PHYSICS LETTERS, 1973, 23 (04) : 181 - 183

[9] STRAIN-INDUCED DEGRADATION OF GAAS INJECTION LASERS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (03) : 147 - 149

[10] JOHNSON DW, 1973, APPL PHYS LETT, V23, P192

[1] ABLOVA MS, 1971, FIZ TVERD TELA+, V12, P2672

[2] BIARD JR, 1966, P INT S GAAS, P113

[3] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044

[4] DYMENT JC, 1973, INT ELECTRON DEVICES

[5] THERMAL EXPANSION OF ALAS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3926 - +

[6] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4113 - 4119

[7] EFFECTS OF ADSORPTION ON INDENTATION DEFORMATION OF NON-METALLIC SOLIDS [J]. PHILOSOPHICAL MAGAZINE, 1968, 18 (151) : 73 - +

[8] CONTINUOUS OPERATION OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS WITH 30 DEGREES C HALF-LIVES EXCEEDING 1000-H [J]. APPLIED PHYSICS LETTERS, 1973, 23 (04) : 181 - 183

[9] STRAIN-INDUCED DEGRADATION OF GAAS INJECTION LASERS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (03) : 147 - 149

[10] JOHNSON DW, 1973, APPL PHYS LETT, V23, P192