GAIN AND CARRIER LIFETIME MEASUREMENTS IN ALGAAS SINGLE QUANTUM WELL LASERS

被引:38
作者
DUTTA, NK
HARTMAN, RL
TSANG, WT
机构
关键词
D O I
10.1109/JQE.1983.1072033
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1243 / 1246
页数:4
相关论文
共 13 条
[1]  
CASEY HC, 1978, HETEROSTRUCTURE LA A
[2]  
DINGLE R, 1976, Patent No. 3982207
[3]   GENERALIZED EXPRESSIONS FOR THE TURN-ON DELAY IN SEMICONDUCTOR-LASERS [J].
DIXON, RW ;
JOYCE, WB .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4591-4595
[4]   (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS - COMPARISON OF DEVICES FABRICATED WITH DEEP AND SHALLOW PROTON-BOMBARDMENT [J].
DIXON, RW ;
JOYCE, WB .
BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (06) :975-985
[5]   TEMPERATURE-DEPENDENCE OF THE LASING CHARACTERISTICS OF THE 1.3-MU-M INGAASP-INP AND GAAS-AL0.36GA0.64AS DH LASERS [J].
DUTTA, NK ;
NELSON, RJ .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (05) :871-878
[6]   CALCULATED THRESHOLD CURRENT OF GAAS QUANTUM WELL LASERS [J].
DUTTA, NK .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7211-7214
[7]  
DUTTA NK, 1982, ELECTRON LETT MAY, P451
[8]   GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].
HAKKI, BW ;
PAOLI, TL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1299-1306
[9]   TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR A QUANTUM-WELL HETEROSTRUCTURE LASER [J].
HESS, K ;
VOJAK, BA ;
HOLONYAK, N ;
CHIN, R .
SOLID-STATE ELECTRONICS, 1980, 23 (06) :585-589
[10]   QUANTUM-WELL HETEROSTRUCTURE LASERS [J].
HOLONYAK, N ;
KOLBAS, RM ;
DUPUIS, RD ;
DAPKUS, PD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186