TEMPERATURE-DEPENDENCE OF THE LASING CHARACTERISTICS OF THE 1.3-MU-M INGAASP-INP AND GAAS-AL0.36GA0.64AS DH LASERS

被引：29

作者：

DUTTA, NK

NELSON, RJ

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1982年 / 18卷 / 05期

关键词：

D O I：

10.1109/JQE.1982.1071621

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：871 / 878

页数：8

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[10] CURRENT DIRECTIONS IN GAAS-LASER DEVICE DEVELOPMENT
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