GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS

被引：710

作者：

HAKKI, BW ^{[1
]}

PAOLI, TL ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 03期

关键词：

D O I：

10.1063/1.321696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1299 / 1306

页数：8

共 25 条

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[2] REFRACTIVE-INDEX OF ALXGA1-X AS BETWEEN 1.2 AND 1.8 EV
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[3] COLLINS RE, 1960, FIELD THEORY GUIDED
[4] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06): : 726 - &
[5] THRESHOLD REDUCTION BY ADDITION OF PHOSPHORUS TO TERNARY LAYERS OF DOUBLE-HETEROSTRUCTURE GAAS LASERS
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[J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 481 - 484
[6] DEPENDENCE OF THRESHOLD CURRENT-DENSITY AND EFFICIENCY ON FABRY-PEROT CAVITY PARAMETERS - SINGLE HETEROJUNCTION (ALGA)AS-GAAS LASER-DIODES
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[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1204 - +
[7] GOODWIN AR, 1970, IEEE J QUANT ELECTRO, VQE 6, P311
[8] CARRIER AND GAIN SPATIAL PROFILES IN GAAS STRIPE GEOMETRY LASERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) : 5021 - 5028
[9] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN
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PAOLI, TL
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4113 - 4119
[10] GAAS DOUBLE HETEROSTRUCTURE LASING BEHAVIOR ALONG JUNCTION PLANE
HAKKI, BW
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 292 - 302

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